View ADP1196_7895545.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

5 v, 3 a logic controlled high - side or low - side load switch data sheet ADP1196 rev. 0 document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed b y analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2013 analog devices, inc. all rights reserved. technical support www.analog.com features low rds on of 10 m in 6 - ball wlcsp wide input voltage range: 0 v to 5.5 v 3 a continuous operating current at 70c bias supply voltage range : 1.8 3 v to 5.5 v low 26 a ground ( quiescent ) current , v in 3 .4 v low 5 0 a quiescent current, v in = 5 .5 v over temperature protection circuitry low shutdown current : <3.5 a ultra small 1.0 mm 1.5 mm, 6 - ball, 0.5 mm pitch wlcsp applications communications and i nfrastructure thermoelectric cooler (tec) c ontroller reverse polarity for heating and c ooling fine l ine g eometry c ore v oltage i n rush current control m edical and h ealthcare instrumentation typical applications circuits figure 1 . low - side l oad a pplication figure 2 . high - side load a pplication general description the ADP1196 is a high - side or low - side load switch designed for vin operation b etween 0 v and 5.5 v with a vb_en supply of 1.83 v to 5.5 v. the device contains an internal charge pump that operates from either vin or vb_en, whichever is higher, and an ultr a low on resistance, n - channel mosfet. this n - channel mosfet supports more than 2 a of c onti nuous current at vin close to 0 v , and , with its ultralow on resistance, minimizes power loss. in addition, the on resistance is constant, independent of the vin or vb_en voltage. the low 26 a quiescent current and ultralow shutdown current make the ADP1196 i deal for low power applications. when the junction temperature exceeds 125c, overtemperature protection circuitry is activated , thereby protecting the ADP1196 and downstream circuits from potential damage. the ADP1196 occupies minimal printed circuit board (pcb) space , with an area of less than 1.5 mm 2 and a height of 0.60 mm. the ADP1196 is available in an ultra small 1 .0 mm 1.5 mm, 6 - ball, 0.5 mm pitch wlcsp . adp 1 196 gnd vin vout vin vout vb_en load + ? + ? 1 1260-001 adp 1 196 gnd vin vout vin vout vb_en load + ? + ? 1 1260-002
ADP1196 data sheet rev. 0 | page 2 of 12 table of contents features .............................................................................................. 1 applications ....................................................................................... 1 typical applications circuits .......................................................... 1 general description ......................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 timing diagram ........................................................................... 3 absolute maxim um ratings ............................................................ 4 thermal resistance ...................................................................... 4 esd caution .................................................................................. 4 pin configuration and function descriptions ............................. 5 typical performance characteristics ..............................................6 theo ry of operation .........................................................................9 applications information .............................................................. 10 capacitor selection .................................................................... 10 ground c urrent .......................................................................... 10 enable feature ............................................................................ 10 timing ......................................................................................... 11 current - limit and thermal overload protection ................. 11 outline dimensions ....................................................................... 12 ordering guide .......................................................................... 12 revision history 6 /13 revision 0: initial version
data sheet ADP1196 rev. 0 | page 3 of 12 specifications v in = 1.8 v, v vb_en = 1.83 v, i out = 1 a, t a = 25c, t j = ?40c to +85c for minimum/maximum specifications, unless otherwise noted. table 1. parameter symbol test conditions/comments min typ max unit input voltage range v in 0 5.5 v bias supply voltage range v vb_en 1.83 5.5 v enable vb_en input v ih v in < 1.8 v 1.83 v v il v in < 1.8 v 1.6 v v ih v in = 1.8 v to 5.5 v 1.2 v v il v in = 1.8 v to 5.5 v 0.4 v vb_en pull-down resistor i en v vb_en = 400 mv 4 m current ground (quiescent) current i gnd v in = 1.83 v, 1.2 v < v vb_en < 1.8 v or v vb_en = 1.83 v, v in = 0.1 v 26 50 a v in = 3.4 v, 1.2 v < v vb_en < 1.8 v or v vb_en = 3.4 v, v in = 0.1 v 26 a v in = 4.2 v, 1.2 v < v vb_en < 1.8 v or v vb_en = 4.2 v, v in = 0.1 v 35 50 a v in = 5.5 v, 1.2 v < v vb_en < 1.8 v or v vb_en = 5.5 v, v in = 0.1 v 50 68 a shutdown current i off v vb_en = gnd, v out = 0 v, v in = 4.2 v 3.5 a v vb_en = gnd, v out = 0 v, v in = 1.8 v to 5.5 v 40 a continuous operating current 1 i out v in = 1.83 v to 5.5 v, v vb_en > 1.2 v or v vb_en = 1.83 v to 5.5 v, v in = 0.1 v to v vb_en 3 a vin to vout resistance rds on v in = 5.5 v, v vb_en > 1.2 v or v vb_en = 5.5 v, v in = 0.1 v 0.01 0.015 v in = 4.2 v, v vb_en > 1.2 v or v vb_en = 4.2 v, v in = 0.1 v 0.01 0.015 v in = 1.83 v, v vb_en > 1.2 v or v vb_en = 1.83 v, v in = 0.1 v 0.01 0.015 v out turn-on delay time see figure 3 turn-on delay time t on_dly v in = 1.83 v to 5.5 v, v vb_en > 1.2 v, c load = 1 f 2 ms thermal shutdown thermal shutdown threshold ts sd t j rising 125 c thermal shutdown hysteresis ts sd-hys 15 c 1 at an ambient temperature of 85c, the part can withstand a continuous current of 2. 22 a. at a load current of 3 a, the opera tional lifetime derates to 2190 hours. timing diagram figure 3. timing diagram v vb_en v out turn-on rise time 90% 10% turn-off delay turn-off fall time turn-on delay 11260-004
ADP1196 data sheet rev. 0 | page 4 of 12 absolute maximum rat ings table 2. parameter rating vin to gnd ?0.3 v to +6.5 v vout to gnd ?0.3 v to vin vb_ en to gnd ?0.3 v to +6.5 v continuous drain current t a = 25c 4 a t a = 85c 2.22 a continuous diode current ?50 ma storage temperature range ?65c to +150c operating junction temperature range ?40c to +105c soldering conditions jedec j - std -020 stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance table 3 . typical ja and jb values p ackage type ja jb unit 6- ball, 0.5 mm pitch wlcsp 260 58 c/w esd caution
data sheet ADP1196 rev. 0 | page 5 of 12 pin configuration an d function descripti ons figure 4 . pin configuration table 4 . pin function descriptions pin no. mnemonic description a1, b1 vin input voltage. a2, b2 vout output voltage. c1 vb_ en enable /bias input. drive vb_ en high to turn on the switch , and drive vb_ en low to turn off the switch. c2 gnd ground. vin vout vin vb_en gnd t op view (bal l side down) not to scale 1 a b c 2 bal l a1 indic a t or vout 1 1260-003
ADP1196 data sheet rev. 0 | page 6 of 12 typical performance characteristics v in = 1.8 v, v vb_ en = 1.83 v, c in = c out = 1 f, t a = 25c, unless otherwise noted. figure 5 . rds on vs. temperature, 50 ma , different input voltages (v in ) figure 6 . rds on vs. temperature, 3 a, different input voltages (v in ) figure 7 . rds on vs. input voltage (v in ), different load currents figure 8 . voltage drop vs . input voltage (v in ) , different load currents figure 9 . ground current vs. temperature, different load currents , v in = 1.8 v figure 10 . ground current vs. temperature , different load currents, v in = 3. 6 v 0 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 ?40 ?30 ?20 ?10 0 10 20 30 40 50 60 70 80 90 rds on (?) temper a ture (c) v in = 0.2v v in = 1v v in = 3v v in = 5.5v 1 1260-005 0 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 ?40 ?30 ?20 ?10 0 10 20 30 40 50 60 70 80 90 rds on (?) temper a ture (c) v in = 0.2v v in = 1v v in = 3v v in = 5.5v 1 1260-006 0 0.005 0.010 0.015 0.020 0.025 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 rds on (? ) input vo lt age (v) i out = 50m a i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a 1 1260-007 0 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 difference (v) input vo lt age (v) i out = 50m a i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a 1 1260-008 0 5 10 15 20 25 30 35 40 45 50 ?40 ?5 25 55 85 temper a ture (c) ground current ( a) i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a 1 15 1 1260-009 ?40 ?5 25 55 85 1 15 0 5 10 15 20 25 30 35 40 45 50 temper a ture (c) ground current ( a) 1 1260-010 i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a
data sheet ADP1196 rev. 0 | page 7 of 12 figure 11 . ground current vs. temperature, different load currents , v in = 5 v figure 12 . ground current vs. load current, different input voltages (v in ) figure 13 . shutdown current vs. temperature, different input voltages (v in ) , v out open figure 14 . shutdown current vs. temperature, v out = 0 v, different input voltages (v in ) figure 15 . typical turn - on time and inrush current , v in = 1.8 v, c out = 47 f, 330 load figure 16 . typical turn - on time and inrush current , v in = 1.8 v, c out = 100 f, 330 load 0 10 20 30 40 50 60 70 80 90 100 ground current ( a) i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a ?40 ?5 25 55 85 1 15 temper a ture (c) 1 1260-0 1 1 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 10000 load current (ma) ground current ( a) v in = 0.2v v in = 0.3v v in = 0.4v v in = 0.5v v in = 1.0v v in = 2.0v v in = 3.0v v in = 4.0v v in = 5.0v v in = 5.5v 1 1260-012 0 2 4 6 8 10 ?40 ?20 0 20 40 60 80 100 temper a ture (c) shutdown current ( a) v in = 0.2v v in = 0.3v v in = 0.4v v in = 0.5v v in = 1.0v v in = 2.0v v in = 3.0v v in = 4.0v v in = 5.0v v in = 5.5v 1 1260-013 0 4 8 12 16 20 ?40 ?20 0 20 40 60 80 100 temper a ture (c) shutdown current ( a) v in = 0.2v v in = 0.3v v in = 0.4v v in = 0.5v v in = 1.0v v in = 2.0v v in = 3.0v v in = 4.0v v in = 5.0v v in = 5.5v 1 1260-014 ch1 20ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 500mv b w b w t v out input current enable 2 3 1 1260-015 ch1 50ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 500mv b w b w t v out input current enable 2 3 1 1260-016
ADP1196 data sheet rev. 0 | page 8 of 12 figure 17 . typical turn - on time and inrush current, v in = 3.3 v, c out = 47 f, 330 load figure 18 . typical turn - on time and inrush current, v in = 3.3 v, c out = 100 f, 330 load figure 19 . typical turn - on time and inrush current, v in = 5 v, c out = 47 f, 330 load figure 20 . typical turn - on time and inrush current, v in = 5 v, c out = 100 f, 330 load ch1 20ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 1v b w b w t v out input current enable 2 3 1 1260-017 ch1 50ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 1v b w b w t v out input current enable 2 3 1 1260-018 ch1 20ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 2v b w b w t v out input current enable 2 3 1 1260-019 ch1 50ma ? ch2 1v m1 m s a ch2 1.18v 1 t 10.6% b w ch3 2v b w b w t v out input current enable 2 3 1 1260-020
data sheet ADP1196 rev. 0 | page 9 of 12 theory of operation figure 21 . functional block diagram the ADP1196 is a high - side or low - side n - channel metal oxide semiconductor ( nmos ) load switch that is controlled by an internal charge pump. the ADP1196 operate s with voltages from 1.8 3 v to 5.5 v on either vin or vb_en . internal circuitry monitors the vin and vb_en pins, connecting the inte rnal power supply to the higher of the two volta ges . this operation allows the nmos load switch to operate on the low side of a particular load. an internal charge pump biases the nmos switch to achieve a relatively constant, ultralow on resistance of 10 m? across the entire supply range. the use of the internal charge pump also allows for controlled turn - on times. turning the nmos switch on and of f is cont rolled by the enable input, vb_ en, which can interface dir ectly with 1.83 v logic signals when vin is greater than 1.8 v. the ADP1196 supports 3 a of continuous current as long as t a is less than or equal to 70c. at 85c, the de rated load current falls to 2.22 a. overcurrent protection limits the output current to 4 a. the overtemperature protection ci rcuit is activated if the load cur rent causes the junction temperature to exceed 125c. when this occurs, the overtemperature protection circuitry disables the output until the junction temperature falls below approximately 110c, at which point the output is re enabled. if the fault condition persists, the output cycles off and on until the fault is removed. esd protection structures are shown in the block diagram as zener diodes (see figure 21) . the ADP1196 is a low quiescent current device with a nominal 4 m? pull - down resistor on its enable pin (vb_en). the package is a space - saving 1.0 mm 1.5 mm, 6 - ball wlcsp. vout vin vout vin gnd vb_en charge pum p , overcurren t , and slew r a te contro l overtemper a ture protection supp l y switch enable logic 1 1260-021
ADP1196 data sheet rev. 0 | page 10 of 12 applications information capacitor selection output capacitor the ADP1196 is designed for operation with small, space - saving ceramic capacitors ; however, it functions with most commonly used capa citors wh en the effective series resistance (esr) value is carefully considered. the esr of the output capacitor affects th e response to load transients. use a typical 1 f capacitor with an esr of 0.1 ? or less for g ood transient response. using a larger value of output capacitance improves the transient response to large changes in load current. input bypass capacitor connec ting at least 1 f of capacitance from vin to gnd reduces the circuit sensitivity to the pcb layout, especially when high source impedance or long input traces are encountered. when greater than 1 f of output capacitance is required, increase the input capacitor to match it. ground current the major source of ground current in the ADP1196 is the internal cha rge pump for the field effect transistor ( fet ) drive circuitry. figure 22 sho ws the typical ground current when v vb _ en = 1.83 v and v in varies from 0.2 v to 5. 5 v . figure 22 . ground current vs. input v oltage, different load currents enable feature the ADP1196 uses the vb_ en pin to enable and disable the vout pin under normal operating conditions. as shown in figure 23 , when a rising voltage (v vb_e n ) on the vb_ en pin crosses the active threshold, vout turns on. when a falling voltage (v vb_e n ) on the vb_ en pin crosses the inactive threshold, vout turns off. figure 23 . typical vb_ en operation as shown in figure 23 , the vb_ en pin has hysteresis built into it. this built - in hysteresis prevents on/off oscillations th at can occur due to noise on the vb_ en pin as it passes through the threshold points. the vb_en pin active/inactive thresholds derive from the v in voltage; therefore, these thresholds vary with changing input voltage s. figure 24 shows the typical vb_en active/inactive threshold when the input voltage varies from 1.8 3 v to 5.5 v. figure 24 . typical vb_ en threshold vs. input voltage (v in ) input vo lt age (v) 0 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 ground current ( a ) 1 1260-122 i out = 50m a i out = 100m a i out = 200m a i out = 500m a i out = 1000m a i out = 3000m a 0 10 20 30 40 50 60 70 80 90 100 0.5 1.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.2 0.4 0.6 0.8 1.0 1.2 v out (v) enable vo lt age (v) v vb_en falling v vb_en rising v out at 3.6v 1 1260-023 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 8 2 . 2 2 . 6 3 . 0 3 . 4 3 . 8 4 . 2 4 . 6 5 . 0 5 . 4 vb_en t hr es h o l d (v) i n p u t vo l t a g e (v) v vb_en r i se v vb_en f a l l 1 1260-024
data sheet ADP1196 rev. 0 | page 11 of 12 timing turn-on delay is defined as the interval between the time that v vb_en exceeds the rising threshold voltage and when v out rises to ~10% of its final value. the ADP1196 includes circuitry that has a typical 2 ms turn-on delay and a controlled rise time to limit the v in inrush current. as shown in figure 25 and figure 26, the turn-on delay is nearly independent of the input voltage. figure 25. typical turn-on time and inrush current, v in = 1.8 v, c out = 47 f, 330 load figure 26. typical turn-on time and inrush current, v in = 5 v, c out = 47 f, 330 load the rise time is defined as the time it takes the output voltage (v out ) to rise from 10% to 90% of its final value. the output voltage rise time is dependent on the rise time of the internal charge pump. for very large values of output capacitance, the rc time constant (where c is the load capacitance (c load ) and r is the rds on ||r load ) can become a factor in the rise time of the output voltage. because rds on is much smaller than r load , an adequate approximation for rc is rds on c load . an input or load capacitor is not required for the ADP1196 , although capacitors can be used to suppress noise on the board. the turn-off time is defined as the time it takes for the output voltage to fall from 90% to 10% of v out . it is also dependent on the rc time constant of the output capacitance and load resistance. figure 27 shows the typical turn-off times with v in = 1.8 v, v in = 3.3 v, and v in = 5.0 v, c out = 47 f, and r load = 330 . figure 27. typical turn-off time, v in = 1.8 , v in = 3.3 v, and v in = 5.0 v, c out = 47 f, r load = 330 current-limit and thermal overload protection the ADP1196 is protected against damage due to excessive power dissipation by current and thermal overload protection circuits. the ADP1196 is designed to limit current when the output load reaches 4 a. when the output load exceeds 4 a, the output voltage is reduced to maintain a constant current limit. thermal overload protection is included, which limits the junction temperature to a maximum of 125c (typical). under extreme conditions (that is, high ambient temperature and/or high power dissipation), when the junction temperature starts to rise above 125c, the output is turned off, reducing the output current to zero. when the junction temperature falls below 110c, the output is turned on again, and output current is restored to its operating value. consider the case where a hard short from vout to gnd occurs. at first, the ADP1196 limits current, so that only 4 a conducts into the short. if the self-heating of the junction is great enough to cause its temperature to rise above 125c, thermal shutdown is activated, turning off the output and reducing the output current to zero. as the junction temperature cools and falls below 110c, the output turns on and conducts 4 a into the short, again causing the junction temperature to rise above 125c. this thermal oscillation between 110c and 125c causes a current oscillation between 4 a and 0 ma that continues as long as the short remains at the output. current and thermal limit protections are intended to protect the device against accidental overload conditions. for reliable operation, device power dissipation must be externally limited so that junction temperature does not exceed 125c. ch1 20ma ? ch2 1v m1ms a ch2 1.18v 1 t 10.6% b w ch3 500mv b w b w t v out input current enable 2 3 11260-025 ch1 20ma ? ch2 1v m1ms a ch2 1.18v 1 t 10.6% b w ch3 2v b w b w t v out input current enable 2 3 11260-026 0 1.0 2.0 3.0 4.0 5.0 6.0 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 time (sec) v out (v) v vb_en v in = 5.0v v in = 3.3v v in = 1.8v 11260-027
ADP1196 data sheet rev. 0 | page 12 of 12 outline dimensions figure 28 . 6 - ball wafer level chip scale package [wlcsp] (cb - 6 - 2) dimensions shown in millimeters ordering guide model 1 temperature range package description package option branding ADP1196acbz -r7 ?40c to +85c 6- ball wafer level chip scale package [wlcsp] cb -6-2 b w 1 z = rohs compliant part. 1 1-08-2012-b a b c 0.675 0.595 0.515 0.380 0.355 0.330 0.270 0.240 0.210 1.000 0.950 0.900 1.500 1.450 1.400 1 2 bot t om view (bal l side up) t op view (bal l side down) side view 0.345 0.295 0.245 1.00 ref 0.50 bsc bal l a1 identifier sea ting plane 0.50 bsc coplanarity 0.075 ? 2013 analog devices, inc. all rights reserved. trademarks and registered trademarks are the property of their respective owners. d11260 - 0 - 6/13(0)

▲Up To Search▲

Price & Availability of ADP1196

	To Download ADP1196 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .